PIMT1 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose double transistor

Philips Semiconductors
PNP general purpose double transistor
Product specification
PIMT1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
thermal resistance from junction to ambient note 1
208
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm².
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
I_CBO
collector-base cut-off current
I_EBO
h_FE
V_CEsat
C_c
f_T
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
MAX.
UNIT
V_CB = −30 V; I_E = 0
−
V_CB = −30 V; I_E = 0; T_j = 150 °C
−
V_EB = −4 V; I_C = 0
−
V_CE = −6 V; I_C = −1 mA
120
I_C = −50 mA; I_B = −5 mA; note 1
−
V_CB = −12 V; I_E = I_e = 0; f = 1 MHz −
V_CE = −12 V; I_C = −2 mA;
100
f = 100 MHz
−100
−10
−100
−
−200
2.2
−
nA
µA
nA
mV
pF
MHz
2001 Oct 22
3