PIMT1 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP general purpose double transistor

Philips Semiconductors
PNP general purpose double transistor
Product specification
PIMT1
FEATURES
• 600 mW total power dissipation
• Low current (max. 100 mA)
• Low voltage (max. 40 V)
• Reduces number of components and required
PCB area
• Reduced pick and place costs.
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor pair in an SC-74 (SOT457) plastic
package.
MARKING
TYPE NUMBER
PIMT1
MARKING CODE
M1
6 54
65 4
TR2
TR1
1 23
Top view
MAM457
123
Fig.1 Simplified outline (SC74; SOT457) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
P_tot
total power dissipation
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
T_amb ≤ 25 °C; note 1
−
−50
V
−
−40
V
−
−5
V
−
−100
mA
−
−200
mA
−
−200
mA
−
300
mW
−65
+150
°C
−
150
°C
−65
+150
°C
−
600
mW
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm².
2001 Oct 22
2