PHX1N60E Datasheet, PDF (3/5 Pages) NXP Semiconductors – PowerMOS transistor Isolated version of PHP1N60E

Philips Semiconductors
PowerMOS transistor
Objective specification
PHX1N60E
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
g_fs
C_iss
C_oss
C_rss
Q_g(tot)
Q_gs
Q_gd
t_{d on}
t_r
t_{d off}
t_f
t_rr
Q_rr
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Total gate charge
Gate to source charge
Gate to drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Source-drain diode reverse
recovery time
Source-drain diode reverse
recovery charge
L_d
Internal drain inductance
L_s
Internal source inductance
CONDITIONS
V_DS = 15 V; I_D = 0.9 A
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
V_GS = 10 V; I_D = 1.9 A; V_DS = 480 V
V_DD = 30 V; I_D = 1.9 A;
V_GS = 10 V; R_GS = 50 Ω;
R_GEN = 50 Ω
I_F = 1.9 A; -dI_F/dt = 100 A/µs;
V_GS = 0 V; V_R = 100 V
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
0.5
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.8
224
27
6
10
1
5
10
30
30
20
350
MAX.
-
310
40
10
-
-
-
15
45
40
30
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
3.5
-
µC
-
4.5
-
nH
-
7.5
-
nH
November 1996
3
Rev 1.000