PHX1N60E Datasheet, PDF (2/5 Pages) NXP Semiconductors – PowerMOS transistor Isolated version of PHP1N60E

Philips Semiconductors
PowerMOS transistor
Objective specification
PHX1N60E
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-a}
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN. TYP. MAX. UNIT
-
-
5 K/W
-
55
- K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V_(BR)DSS
V_GS(TO)
I_DSS
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source leakage current
I_GSS
R_DS(ON)
V_SD
Gate-source leakage current
Drain-source on-state
resistance
Source-drain diode forward
voltage
CONDITIONS
V_GS = 0 V; I_D = 0.25 mA
V_DS = V_GS; I_D = 0.25 mA
V_DS = 600 V; V_GS = 0 V; T_j = 25 ˚C
V_DS = 480 V; V_GS = 0 V; T_j = 125 ˚C
V_GS = ±30 V; V_DS = 0 V
V_GS = 10 V; I_D = 0.9 A
I_F = 1.9 A ;V_GS = 0 V
MIN.
600
2.0
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
3.0 4.0 V
10 100 µA
0.1 1.0 mA
10 100 nA
5.3 6
Ω
1.1 1.4 V
November 1996
2
Rev 1.000