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PHP60N06LT Datasheet, PDF (3/9 Pages) NXP Semiconductors – TrenchMOS transistor Logic level FET | |||
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Philips Semiconductors
TrenchMOS⢠transistor
Logic level FET
Product specification
PHP60N06LT, PHB60N06LT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
(body diode)
ISM
Pulsed source current (body
diode)
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 40 A; VGS = 0 V
trr
Reverse recovery time
IF = 40 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge VGS = -10 V; VR = 30 V
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
WDSS
Drain-source non-repetitive ID = 45 A; VDD ⤠25 V; VGS = 5 V;
unclamped inductive turn-off RGS = 50 â¦; Tmb = 25 ËC
energy
MIN. TYP. MAX. UNIT
-
- 58 A
-
- 232 A
- 0.95 1.2 V
- 1.0 -
V
- 47 - ns
- 0.15 - µC
MIN.
-
MAX.
110
UNIT
mJ
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100â
PD/PD 25 ËC = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100â
ID/ID 25 ËC = f(Tmb); conditions: VGS ⥠5 V
January 1998
3
Rev 1.300
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