PHP1N50E Datasheet, PDF (3/4 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
3,0 max
not tinned
1,3
max ^{1 2 3}
(2x)
3,0
13,5
min
0,9 max (3x)
2,54 2,54
Objective specification
PHP1N50E
4,5
max
5,9
min
15,8
max
0,6
2,4
Fig.1. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
October 1996
3
Rev 1.000