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PHP1N50E Datasheet, PDF (2/4 Pages) NXP Semiconductors – PowerMOS transistor
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Philips Semiconductors
PowerMOS transistor
Objective specification
PHP1N50E
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN. TYP. MAX. UNIT
-
-
2.5 K/W
-
60
- K/W
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source leakage current
IGSS
RDS(ON)
VSD
Gate-source leakage current
Drain-source on-state
resistance
Source-drain diode forward
voltage
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VDS = 500 V; VGS = 0 V; Tj = 25 ˚C
VDS = 400 V; VGS = 0 V; Tj = 125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 1 A
IF = 2 A ;VGS = 0 V
MIN.
500
2.0
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
3.0 4.0 V
10 100 µA
0.1 1.0 mA
10 100 nA
4.5 5.0 Ω
0.8 1.2 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
trr
Qrr
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Total gate charge
Gate to source charge
Gate to drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Source-drain diode reverse
recovery time
Source-drain diode reverse
recovery charge
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 15 V; ID = 1 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VGS = 10 V; ID = 2 A; VDS = 400 V
VDD = 30 V; ID = 2 A;
VGS = 10 V; RGS = 50 Ω;
RGEN = 50 Ω
IF = 2 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 100 V
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
0.5
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.9
230
35
14
10
1
5
10
30
30
20
350
MAX.
-
300
50
30
-
-
-
15
45
40
30
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
2.5
-
µC
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
October 1996
2
Rev 1.000
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