PDTC114YE Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC114YE
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
833
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
I_CEO
collector cut-off current
collector cut-off current
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
RR-----21--
C_c
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
CONDITIONS
I_E = 0; V_CB = 50 V
I_B = 0; V_CE = 30 V
I_B = 0; V_CE = 30 V; T_j = 150 °C
I_C = 0; V_EB = 5 V
I_C = 5 mA; V_CE = 5 V
I_C = 5 mA; I_B = 0.25 mA
MIN.
−
−
−
−
100
−
TYP.
−
−
−
−
−
−
MAX. UNIT
100 nA
1
µA
50
µA
150 µA
−
100 mV
I_C = 100 µA; V_CE = 5 V
I_C = 1 mA; V_CE = 0.3 V
−
0.7 0.5 V
1.4 0.8 −
V
7
10
13
kΩ
3.7 4.7 5.7
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz −
−
2.5 pF
1999 May 18
3