PDTA123JE Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA123JE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
V_I
I_O
I_CM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
MAX.
−50
−50
−10
UNIT
V
V
V
−
+5
V
−
−12
V
−
−100
mA
−
−100
mA
−
150
mW
−65
+150
°C
−
150
°C
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
833
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
I_E = 0; V_CB = −50 V
I_B = 0; V_CE = −30 V
I_B = 0; V_CE = −30 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −10 mA; V_CE = −5 V
I_C = −5 mA; I_B = −0.25 mA
I_C = −100 µA; V_CE = −5 V
I_C = −5 mA; V_CE = −300 mV
−
−
−
−
100
−
−
−1.1
1.54
−
−100 nA
−
−1
µA
−
−50 µA
−
−180 µA
−
−
−
−100 mV
−600 −500 mV
−1.1 −
V
2.2 2.86 kΩ
RR-----21--
resistor ratio
17
21
26
C_c
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz −
−
3
pF
1998 Nov 25
3