PDTA123JE Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA123JE
FEATURES
• Built-in bias resistors R1 and R2
(typ. 2.2 kΩ and 47 kΩ
respectively)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a
SC-75 (SOT416) plastic package.
NPN complement: PDTC123JE.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_O
I_CM
P_tot
h_FE
R1
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
input resistor
RR-----21--
resistor ratio
handbook, halfpage ₃
1
2
Top view
3
R1
1
R2
2
MAM345
Fig.1 Simplified outline (SC-75; SOT416) and symbol.
1
3
2
MGA893 - 1
MARKING
TYPE
NUMBER
PDTA123JE
MARKING
CODE
27
Fig.2 Equivalent inverter
symbol.
CONDITIONS
open base
T_amb ≤ 25 °C
I_C = −10 mA; V_CE = −5 V
MIN.
−
−
−
−
100
1.54
TYP.
−
−
−
−
−
2.2
MAX.
−50
−100
−100
150
−
2.86
UNIT
V
mA
mA
mW
kΩ
17
21
26
1998 Nov 25
2