PBSS8110D Datasheet, PDF (3/12 Pages) NXP Semiconductors – 100 V, 1 A NPN low VCEsat (BISS) transistor

Philips Semiconductors
PBSS8110D
100 V, 1 A NPN low V_CEsat (BISS) transistor
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
continuous collector current
continuous base current
total power dissipation
open emitter
open base
open collector
T_j(max)
T_amb ≤ 25 °C
-
-
-
-
-
-
[1] _-
[2] _-
[3] _-
T_j
junction temperature
-
T_amb
operating ambient temperature
−65
T_stg
storage temperature
−65
Max
Unit
120
V
100
V
5
V
3
A
1
A
0.3
A
300
mW
550
mW
700
mW
150
°C
+150
°C
+150
°C
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm² collector mounting
pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm² collector mounting
pad.
800
P_tot
(mW)
600
400
200
001aaa493
(1)
(2)
(3)
0
0
40
80
(1) FR4 PCB; 6 cm² collector mounting pad.
(2) FR4 PCB; 1 cm² collector mounting pad.
(3) FR4 PCB; standard footprint.
Fig 1. Power derating curves.
120
160
T_amb (°C)
9397 750 12566
Product data sheet
Rev. 01 — 23 April 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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