PBSS8110D Datasheet, PDF (1/12 Pages) NXP Semiconductors – 100 V, 1 A NPN low VCEsat (BISS) transistor

PBSS8110D
100 V, 1 A NPN low V_CEsat (BISS) transistor
Rev. 01 — 23 April 2004
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat transistor in a plastic SOT457 (SC-74) package.
1.2 Features
s SOT457 package
s Low collector-emitter saturation voltage V_CEsat
s High collector current capability I_C and I_CM
s High efficiency, leading to less heat generation.
1.3 Applications
s Major application segments:
x Automotive 42 V power
x Telecom infrastructure
x Industrial.
s DC-to-DC converter
s Peripheral driver
x Driver in low supply voltage applications (e.g. lamps and LEDs)
x Inductive load drivers (e.g. relays, buzzers and motors).
1.4 Quick reference data
Table 1:
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
-
-
100 V
-
-
1
A
-
-
3
A
-
-
200 mΩ