PBSS4041SP_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4041SP
60 V, 5.9 A PNP/PNP low V_CEsat (BISS) transistor
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
P_tot
total power dissipation T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max Unit
0.86 W
1.4
W
2.3
W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
3.0
P_tot
(W)
(1)
2.0
(2)
1.0
(3)
006aac334
0.0
−75
−25
25
75
(1) Ceramic PCB, Al₂O₃, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm²
(3) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves
125
175
T_amb (°C)
PBSS4041SP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 October 2010
© NXP B.V. 2010. All rights reserved.
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