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PBSS4041SP_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor | |||
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PBSS4041SP
60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor
Rev. 2 â 18 October 2010
Product data sheet
1. Product profile
1.1 General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4041SP SOT96-1
Name
SO8
NPN/NPN
complement
PBSS4041SN
NPN/PNP
complement
PBSS4041SPN
1.2 Features and benefits
 Very low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 High efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 Loadswitch
 Battery-driven devices
 Power management
 Charging circuits
 Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
open base
-
-
single pulse;
-
tp ⤠1 ms
IC = â4 A; IB = â0.4 A [1] -
-
â60 V
-
â5.9 A
-
â15 A
47
70
mΩ
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
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