PBSS4021SPN Datasheet, PDF (3/20 Pages) NXP Semiconductors – 20 V NPN/PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4021SPN
20 V NPN/PNP low V_CEsat (BISS) transistor
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
TR1 (NPN)
I_C
collector current
-
TR2 (PNP)
I_C
collector current
-
Per transistor; for the PNP transistor with negative polarity
V_CBO
V_CEO
V_EBO
I_CM
I_B
P_tot
collector-base voltage open emitter
-
collector-emitter voltage open base
-
emitter-base voltage
open collector
-
peak collector current
single pulse; t_p ≤ 1 ms
-
base current
-
total power dissipation T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
Per device
P_tot
total power dissipation T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max Unit
7.5
A
−6.3 A
20
V
20
V
5
V
15
A
1
A
0.73 W
1
W
1.7
W
0.86 W
1.4
W
2.3
W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
PBSS4021SPN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 October 2010
© NXP B.V. 2010. All rights reserved.
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