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PBSS4021SPN Datasheet, PDF (1/20 Pages) NXP Semiconductors – 20 V NPN/PNP low VCEsat (BISS) transistor | |||
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PBSS4021SPN
20 V NPN/PNP low VCEsat (BISS) transistor
Rev. 2 â 13 October 2010
Product data sheet
1. Product profile
1.1 General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4021SPN SOT96-1
Name
SO8
NPN/NPN
complement
PBSS4021SN
PNP/PNP
complement
PBSS4021SP
1.2 Features and benefits
 Very low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 High efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 Loadswitch
 Battery-driven devices
 Power management
 Charging circuits
 Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR1; NPN low VCEsat transistor
VCEO
collector-emitter voltage
IC
collector current
ICM
peak collector current
RCEsat
collector-emitter
saturation resistance
open base
-
-
single pulse; tp ⤠1 ms -
IC = 5 A; IB = 0.5 A
[1] -
-
20 V
-
7.5 A
-
15 A
25 35 mΩ
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