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PBLS6002D Datasheet, PDF (3/16 Pages) NXP Semiconductors – 60 V PNP BISS loadswitch | |||
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Philips Semiconductors
PBLS6002D
60 V PNP BISS loadswitch
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
TR1; PNP low VCEsat transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current (DC)
[1] -
[2] -
[3] -
ICM
peak collector current
single pulse;
-
tp ⤠1 ms
IB
base current (DC)
-
IBM
peak base current
single pulse;
-
tp ⤠1 ms
Ptot
total power dissipation
Tamb ⤠25 °C
[1] -
[2] -
[3] -
TR2; NPN resistor-equipped transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
-
IO
output current (DC)
-
ICM
peak collector current
-
Ptot
total power dissipation
Tamb ⤠25 °C
[1] -
[2] -
[3] -
Per device
Ptot
total power dissipation
Tamb ⤠25 °C
[1] -
[2] -
[3] -
Tstg
storage temperature
â65
Tj
junction temperature
-
Tamb
ambient temperature
â65
Max Unit
â80
V
â60
V
â5
V
â700 mA
â850 mA
â1
A
â2
A
â300 mA
â1
A
250
mW
350
mW
400
mW
50
V
50
V
10
V
+30
V
â10
V
100
mA
100
mA
200
mW
200
mW
200
mW
400
mW
530
mW
600
mW
+150 °C
150
°C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
9397 750 15197
Product data sheet
Rev. 01 â 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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