PBLS6002D Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V PNP BISS loadswitch

PBLS6002D
60 V PNP BISS loadswitch
Rev. 01 — 23 June 2005
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor and
NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted
Device (SMD) plastic package.
1.2 Features
s Low V_CEsat (BISS) transistor and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max
TR1; PNP low V_CEsat transistor
V_CEO
collector-emitter voltage open base
-
I_C
collector current (DC)
[1] _-
R_CEsat
collector-emitter saturation I_C = −1 A;
[2] _-
resistance
I_B = −100 mA
TR2; NPN resistor-equipped transistor
-
−60
-
−1
255 340
V_CEO
I_O
R1
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
open base
-
-
50
-
-
100
3.3
4.7
6.1
R2/R1
bias resistor ratio
0.8
1
1.2
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Unit
V
A
mΩ
V
mA
kΩ