LV1721E50R Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
LV1721E50R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CER
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
CONDITIONS
MIN.
open emitter
−
R_BE = 47 Ω
−
open base
−
open collector
−
−
T_mb ≤ 75 °C
−
−65
−
at 0.1 mm from case; t ≤ 10 s −
MAX.
40
20
15
3
2
18
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
10
handbook, halfpage
IC
(A)
1
(1)
10^−1
MGL004
(2)
10^−2
1
10 15 _{VCE (V)}
10²
T_mb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R_BE ≤ 47 Ω.
Fig.2 DC SOAR.
handbook,²⁰
Ptot
(W)
16
12
8
4
0
0
MGD971
50
100
150
200
Tmb (°C)
Fig.3 Power derating curve.
1997 Feb 19
3