LV1721E50R Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
LV1721E50R
FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor provides excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Internal input and output prematching ensures good
stability and allows an easier design of wideband
circuits.
PINNING - SOT445A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
handbook, halfpage
1
c
APPLICATIONS
• Common emitter class-A amplifiers in CW conditions for
military and professional applications in the 1.7 GHz to
2.1 GHz band.
3
Top view
3
2
b
e
MAM251
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT445A metal ceramic flange package with the emitter
connected to the flange.
Marking code: 1721E50R
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T_mb = 25 °C in a common emitter class-A wideband amplifier.
MODE OF OPERATION
f
(GHz)
V_CE
(V)
I_C
(A)
P_L1
G_po
(W)
(dB)
Class-A (CW)
1.7 to 2.1
16
1.1
≥5
≥7
Z_i; Z_L
(Ω)
see Fig 6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2