BYD67 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Ripple blocking diode

Philips Semiconductors
Ripple blocking diode
Product specification
BYD67
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
t_fr
forward recovery time
t_on
turn-on time
t_rr
reverse recovery time
C_d
diode capacitance
CONDITIONS
I_F = 1 A; T_j = T_{j max}; see Fig.5
I_F = 1 A; see Fig.5
V_R = V_RRMmax;
see Fig.6
V_R = V_RRMmax; T_j = 165 °C;
see Fig.6
when switched to I_F = 1 A
in 50 ns; see Fig.9
when switched from V_F = 0 to
V_F = 3 V; measured between
10% and 90% of I_Fmax;
see Fig.11
when switched from I_F = 0.5 A to
I_R = 1 A; measured at
I_R = 0.25 A; see Fig.11
f = 1 MHz; V_R = 0; see Fig.7
MIN.
−
−
−
−
−
500
−
−
TYP.
−
−
−
−
−
−
−
17
MAX.
1.7
2.3
1
UNIT
V
V
µA
100 µA
350 ns
−
ns
150 ns
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the ‘General Part of associated Handbook.’
1999 Oct 20
3