BYD12 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Controlled avalanche rectifiers

Philips Semiconductors
Controlled avalanche rectifiers
Preliminary specification
BYD12 series
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_F
forward voltage
I_F = 1 A; see Fig.4
I_R
reverse current
V_R = V_RRMmax
V_R = V_RRMmax; T_j = 165 °C; see Fig.5
MAX. UNIT
1.05 V
1 µA
100 µA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-a}
thermal resistance from junction to ambient
note 1
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm,
pitch 5 mm; see Fig.6.
1998 Dec 03
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