BYD12 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Controlled avalanche rectifiers

Philips Semiconductors
Controlled avalanche rectifiers
Preliminary specification
BYD12 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec™⁽¹⁾
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbokok, halfpage
a
MGL571
Fig.1 Simplified outline (SOD120) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_RRM
V_R
I_F(AV)
I_FSM
T_stg
T_j
repetitive peak reverse voltage
BYD12D
BYD12G
BYD12J
BYD12K
BYD12M
continuous reverse voltage
BYD12D
BYD12G
BYD12J
BYD12K
BYD12M
average forward current
non-repetitive peak forward current
storage temperature
junction temperature
T_amb = 25 °C; printed-circuit board
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period,
see Fig.2
t = 10 ms half sinewave;
T_j = 25 °C prior to surge;
V_R = V_RRMmax
see Fig.3
MIN. MAX. UNIT
−
200 V
−
400 V
−
600 V
−
800 V
− 1000 V
−
200 V
−
400 V
−
600 V
−
800 V
− 1000 V
−
0.82 A
−
15 A
−65 +175 °C
−65 +175 °C
1998 Dec 03
2