BYD1100 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Hyper fast soft-recovery rectifier

Philips Semiconductors
Hyper fast soft-recovery rectifier
Product specification
BYD1100
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_F
V_(BR)R
I_R
t_rr
C_d
-d-d--I--t^R--
forward voltage
reverse avalanche breakdown
voltage
reverse current
reverse recovery time
diode capacitance
maximum slope of reverse
recovery current
I_F = 1 A; T_j = T_{j max}; see Fig.5
I_F = 1 A; see Fig.5
I_R = 0.1 mA
V_R = V_RRMmax; see Fig.8
V_R = V_RRMmax; T_j = 165 °C;
see Fig.8
when switched from I_F = 0.5 A
to I_R = 1 A; measured at
I_R = 0.25 A; see Fig.10
f = 1 MHz; V_R = 0; see Fig.9
when switched from
I_F = 1 A to V_R ≥ 30 V and
dI_F/dt = −1 A/µs; see Fig.11
MIN.
−
−
120
−
−
−
−
−
TYP.
−
−
−
−
−
−
MAX. UNIT
0.735 V
0.96 V
−V
5 µA
150 µA
10 ns
70
− pF
−
2 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.12.
For more information please refer to the ‘General Part of associated Handbook’.
1999 Nov 16
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