BYC30WT-600P_15 Datasheet, PDF (3/9 Pages) NXP Semiconductors – Hyperfast power diode

NXP Semiconductors
BYC30WT-600P
Hyperfast power diode
Symbol
I_FSM
T_stg
T_j
90
P_tot
(W)
60
30
Parameter
non-repetitive peak forward
current
storage temperature
junction temperature
Conditions
t_p = 10 ms; T_j(init) = 25 °C; sine-wave
pulse; Fig. 4
t_p = 8.3 ms; T_j(init) = 25 °C; sine-wave
pulse; Fig. 4
Min Max Unit
-
270 A
-
300 A
-65 175 °C
-
175 °C
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δ=1
0.5
0.2
0.1
60
P_tot
(W)
40
20
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a = 1.57
1.9
2.2
2.8
4.0
0
0
10
20
30
40
50
I_F(AV) (A)
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0
0
10
20
30
I_F(AV) (A)
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
45
I_F(AV)
(A)
30
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115 °C
10⁴
I_FSM
(A)
10³
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15
10² _IF
I_FSM
0
-50
0
50
100
150
200
T_mb (°C)
t_p
t
T_j(init) = 25 °C max
10
10^-5
10^-4
10^-3
10^-2
t_p (s)
Fig. 3.
Forward current as a function of mounting base Fig. 4.
temperature; maximum values
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
BYC30WT-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 February 2014
© NXP N.V. 2014. All rights reserved
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