BYC10-600 Datasheet, PDF (3/6 Pages) NXP Semiconductors – Rectifier diode ultrafast, low switching loss

Philips Semiconductors
Rectifier diode
ultrafast, low switching loss
Product specification
BYC10-600
Forward dissipation, PF (W)
30
Vo = 1.3 V
25 ^{Rs = 0.05 Ohms}
BYC10-600
Tmb(max) C
90
D = 1.0
100
0.5
20
0.2
110
0.1
15
120
10
I
tp
D
=
tp
T
130
5
140
T
t
0
150
0
5
10
15
Average forward current, IF(AV) (A)
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where I_F(AV) =I_F(RMS) x √D.
Diode reverse recovery switching losses, Pdsw (W)
0.25
f = 20 kHz
Tj = 125 C
0.2 VR = 400 V
0.15
10 A
20 A
0.1
0.05
IF = 5 A
0
100 _{Rate of change of current, dIF/dt (A/us)}
1000
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dI_F/dt.
Transistor losses due to diode reverse recovery, Ptsw (W)
8
20 A
7
6
5
4
10 A
f = 20 kHz
Tj = 125 C
VR = 400 V
3
IF = 5 A
2
1
BYC10-600
0
100
Rate of change of current, dIF/dt (A/us)
1000
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dI_F/dt.
ID
dIF/dt
VD
Irrm
ID = IL
losses due to
diode reverse recovery
time
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Reverse recovery time, trr (ns)
100
BYC10-600
IF = 5 A
20 A
10 A
Tj = 125 C
VR = 400 V
10
100
Rate of change of current, dIF/dt (A/us)
1000
Fig.7. Typical reverse recovery time t_rr, as a function
of rate of change of current dI_F/dt.
100 ^{Peak reverse recovery current, Irrm (A)}
BYC10-600
10
20 A
IF = 5 A
Tj = 125 C
VR = 400 V
1
100 _{Rate of change of current, dIF/dt (A/us)}
1000
Fig.8. Typical peak reverse recovery current, I_rrm as a
function of rate of change of current dI_F/dt.
September 1998
3
Rev 1.100