BYC10-600 Datasheet, PDF (2/6 Pages) NXP Semiconductors – Rectifier diode ultrafast, low switching loss

Philips Semiconductors
Rectifier diode
ultrafast, low switching loss
ELECTRICAL CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V_F
Forward voltage
I_R
Reverse current
t_rr
Reverse recovery time
t_rr
Reverse recovery time
I_rrm
Peak reverse recovery current
V_fr
Forward recovery voltage
CONDITIONS
I_F = 10 A; T_j = 150˚C
I_F = 20 A; T_j = 150˚C
I_F = 10 A;
V_R = 600 V
V_R = 500 V; T_j = 100 ˚C
I_F = 10 A to V_R = 400 V;
dI_F/dt = 500 A/µs
I_F = 10 A to V_R = 400 V;
dI_F/dt = 500 A/µs; T_j = 125˚C
I_F = 10 A to V_R = 400 V;
dI_F/dt = 500 A/µs; T_j = 125˚C
I_F = 10 A; dI_F/dt = 100 A/µs
Product specification
BYC10-600
MIN.
-
-
-
-
-
-
TYP.
1.4
1.7
2.0
9
1.1
19
MAX.
1.8
2.3
2.8
200
3.0
-
UNIT
V
V
V
µA
mA
ns
-
32 40 ns
-
9.5 12
A
-
8
11
V
IL
Vin
150 uH
typ
ID
Vo = 400 V d.c.
OUTPUT DIODE
500 V MOSFET
Vin ^{Vin = 400 V d.c.}
IR IF
inductive load
IL
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction, mode where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
September 1998
2
Rev 1.100