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BY614 Datasheet, PDF (3/6 Pages) NXP Semiconductors – Miniature high-voltage soft-recovery rectifier | |||
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Philips Semiconductors
Miniature high-voltage soft-recovery
rectiï¬er
Product speciï¬cation
BY614
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IR
reverse current
Qr
recovery charge
IF = 50 mA; Tj = Tj max; see Fig.4
VR = VRWmax; Tj = 120 °C
when switched from IF = 100 mA to
VR ⥠100 V and dIF/dt = â200 mA/µs;
see Fig.6
tf
fall time
when switched from IF = 100 mA to
VR ⥠100 V and dIF/dt = â200 mA/µs;
see Fig.6
trr
reverse recovery time when switched from IF = 100 mA to
VR ⥠100 V and dIF/dt = â200 mA/µs;
see Fig.6
Cd
diode capacitance
VR = 0 V; f = 1 MHz
MIN.
â
â
â
100
â
â
TYP.
â
â
â
â
â
2
MAX.
6
3
1
UNIT
V
µA
nC
â ns
300 ns
â pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
100
K/W
155
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper â¥40 µm, see Fig.5.
For more information please refer to the âGeneral Part of associated Handbookâ.
1996 Sep 26
3
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