BY249 Datasheet, PDF (3/5 Pages) NXP Semiconductors – Rectifier diodes general purpose

Philips Semiconductors
Rectifier diodes
general purpose
Product specification
BY249 series
PF / W
15
Vo = 1.0120 V
Rs = 0.0200 Ohms
BY249
Tmb(max) / C
120
D = 1.0
10
0.5
130
0.2
0.1
5
I
tp
D
=
tp
T
140
T
t
0
150
0
2
4
6
8
10
12
IF(AV) / A
Fig.1. Maximum forward dissipation P_F = f(I_F(AV));
square wave where I_F(AV) =I_F(RMS) x √D.
PF / W
15
Vo = 1.012 V
Rs = 0.02 Ohms
10
5
BY249
Tmb(max) / C
120
a = 1.57 ₁₃₀
1.9
2.2
2.8
4
140
0
150
0
2
4
6
8
IF(AV) / A
Fig.2. Maximum forward dissipation P_F = f(I_F(AV));
sinusoidal current waveform where a = form
factor = I_F(RMS) / I_F(AV).
IFS(RMS) / A
80
BY229
70
IFSM
60
50
40
30
20
10
0
1ms
10ms
0.1s
1s
10s
tp / s
Fig.3. Maximum non-repetitive rms forward current.
I_F = f(t_p); sinusoidal current waveform; T_j = 150˚C prior
to surge with reapplied V_RWM.
IF / A
30
Tj = 100 C
Tj = 25 C
20
BY249
typ max
10
Fig.4.
0
0
0.5
1
1.5
2
VF / V
Typical and maximum forward characteristic
I_F = f(V_F); parameter T_j
10 ^{Transient thermal impedance, Zth j-mb (K/W)}
1
0.1
0.01
P_D
tp
D
=
tp
T
0.001
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BY229
Fig.5. Transient thermal impedance Z_th = f(t_p)
September 1998
3
Rev 1.300