BY249 Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes general purpose

Philips Semiconductors
Rectifier diodes
general purpose
Product specification
BY249 series
FEATURES
• Low forward volt drop
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
1
QUICK REFERENCE DATA
V_R = 300 V / 600 V / 800 V
a
V_F ≤ 1.05 V
2
I_F(AV) = 7 A
I_FSM ≤ 60 A
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diodes. The devices are
intended for low frequency power
rectifier applications.
The BY249 series is supplied in the
conventional leaded SOD59
(TO220AC) package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab cathode
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RSM
V_RRM
V_RWM
V_R
I_F(AV)
I_F(RMS)
I_FRM
I_FSM
I²t
T_stg
T_j
Peak non-repetitive reverse
voltage
Peak repetitive reverse
voltage
Crest working reverse voltage
Continuous reverse voltage
BY249
-
-
-
-
Average forward current¹
RMS forward current
Peak repetitive forward
current
Peak non-repetitive forward
current.
I²t for fusing
Storage temperature
Operating junction
temperature
sinusoidal; a = 1.57; T_mb ≤ 131 ˚C -
-
sinusoidal; a = 1.57;
-
t = 10 ms
-
t = 8.3 ms
-
sinusoidal; T_j = 150 ˚C prior to
surge; with reapplied V_RWM(max)
t = 10 ms
-
-40
-
MAX.UNIT
-300 -600 -800
300 600 800
300 600 800
200 500 700
200 500 700
7
11
60
60
66
18
150
150
UNIT
V
V
V
V
A
A
A
A
A
A²s
˚C
˚C
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300