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| BUK9775-55 Datasheet, PDF (3/8 Pages) NXP Semiconductors – TrenchMOS transistor Logic level FET | |||
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Philips Semiconductors
TrenchMOS⢠transistor
Logic level FET
Product specification
BUK9775-55
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 11.7 A; VGS = 0 V
trr
Reverse recovery time
IF = 11.7 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 10 A; VDD ⤠25 V;
VGS = 5 V; RGS = 50 â¦; Tmb = 25 ËC
MIN. TYP. MAX. UNIT
-
- 11.7 A
-
-
47
A
- 0.95 1.2 V
-
32
-
ns
- 0.12 -
µC
MIN. TYP. MAX. UNIT
-
-
30 mJ
April 1998
3
Rev 1.000
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