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BUK9006-55A Datasheet, PDF (3/10 Pages) NXP Semiconductors – N-channel Enhancement mode field-effect power Transistor
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Philips Semiconductors
BUK9006-55A
TrenchMOS™ logic level FET
4. Characteristics
Table 3: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
55
Tj = −55 °C
50
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 5
Tj = 25 °C
1
Tj = 175 °C
0.5
Tj = −55 °C
-
IDSS
drain-source leakage current VDS = 55 V; VGS = 0 V
Tj = 25 °C
-
Tj = 175 °C
-
IGSS
gate-source leakage current VGS = ±15 V; VDS = 0 V
-
RDSon(die) die drain-source on-state
resistance
VGS = 5 V; ID = 25 A;
Figure 4
Tj = 25 °C
-
Tj = 175 °C
-
Dynamic characteristics
Qg(tot)
total gate charge
VGS = 5 V; VDS = 44 V;
-
Qgs
gate-source charge
ID = 25 A; Figure 10
-
Qgd
gate-drain (Miller) charge
-
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
-
Coss
output capacitance
f = 1 MHz; Figure 8
-
Crss
reverse transfer capacitance
-
td(on)
tr
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 5 V; RG = 10 Ω
-
td(off)
turn-off delay time
-
tf
fall time
-
Source-drain diode
VSD
source-drain (diode forward) IS = 25 A; VGS = 0 V;
-
voltage
Figure 11
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs
-
Qr
recovered charge
VGS = −10 V; VDS = 30 V
-
Typ
Max
Unit
-
-
V
-
-
V
1.5
2
V
-
-
V
-
2.3
V
0.05
10
µA
-
500
µA
2
100
nA
5
6
mΩ
-
12
mΩ
92
-
nC
11
-
nC
43
-
nC
4 550
6 020
pF
760
900
pF
500
690
pF
40
-
nS
175
-
nS
280
-
nS
167
-
nS
0.85
1.2
V
70
-
ns
160
-
nC
9397 750 11571
Preliminary data
Rev. 01 — 1 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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