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| BUK9006-55A Datasheet, PDF (1/10 Pages) NXP Semiconductors – N-channel Enhancement mode field-effect power Transistor | |||
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BUK9006-55A
TrenchMOS⢠logic level FET
Rev. 01 â 1 August 2003
Preliminary data
1. Product proï¬le
1.1 Description
N-channel enhancement mode ï¬eld-effect power transistor available as a bare die
using Philips General Purpose Automotive (GPA) TrenchMOS⢠technology.
Product availability:
BUK9006-55A distributed as individual die on reel.
1.2 Features
s 25 A testing of individual die
s Life-tested to Q101 at 175 °C
s Inductive energy testing of individual s Automatic visual inspection.
die
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V and 24 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ⤠1.1 J
s V(BR)DSS ⤠55 V
s Die size = 4.30 Ã 4.30 mm (typ)
s RDSon(die) = 5 m⦠(typ)
s VGS(th) = 1.5 V (typ)
s Die thickness = 240 µm (typ).
2. Pinning information
Table 1: Pinning - Bare die simpliï¬ed outline and symbol
Pin Description
Simpliï¬ed outline
1
gate
2
source
-
drain; connected to
underside of die
1
2
03nn81
Symbol
d
g
MBB076
s
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