BUK7880-55A Datasheet, PDF (3/9 Pages) NXP Semiconductors – TrenchMOS transistor standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7880-55
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W_DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I_D = 2.5 A; V_DD ≤ 25 V;
V_GS = 10 V; R_GS = 50 Ω; T_sp = 25 ˚C
MIN.
-
TYP.
-
MAX. UNIT
30 mJ
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_sp)
120 ^ID%
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_sp); conditions: V_GS ≥ 10 V
100
ID/A
RDS(ON) = VDS/ID
10
DC
1
tp =
1 us
10us
100 us
1 ms
10ms
100ms
0.1
1
10 _VDS/V
100
Fig.3. Safe operating area. T_sp = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
100 ^{Zth/ (K/W)}
10 _0.5
0.2
0.1
1 _0.05
0.02
0.1
P_D
tp
D
=
tp
T
T
t
0.01
1.0E-06
0.0001 _t/s 0.01
1
100
Fig.4. Transient thermal impedance.
Z_{th j-sp} = f(t); parameter D = t_p/T
April 1998
3
Rev 1.100