English
Language : 

BUK7880-55A Datasheet, PDF (2/9 Pages) NXP Semiconductors – TrenchMOS transistor standard level FET
◁
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7880-55
THERMAL RESISTANCES
SYMBOL
Rth j-sp
Rth j-amb
PARAMETER
From junction to solder point
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.18
TYP.
12
-
MAX.
15
70
UNIT
K/W
K/W
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 150˚C
Tj = -55˚C
VDS = 55 V; VGS = 0 V;
Tj = 150˚C
VGS = ±10 V
Tj = 150˚C
IG = ±1 mA;
VGS = 10 V; ID = 5 A
Tj = 150˚C
MIN.
55
50
2
1.2
-
-
-
-
-
16
TYP.
-
-
3
-
-
0.05
-
0.04
-
-
MAX.
-
-
4
-
4.4
10
100
1
10
-
UNIT
V
V
V
V
µA
µA
µA
µA
V
-
65 80 mΩ
-
-
148 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
CONDITIONS
VDS = 25 V; ID = 5 A; Tj = 25˚C
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 7 A;
VGS = 10 V; RG = 10 Ω;
Tj = 25˚C
MIN.
1
-
-
-
-
-
-
-
TYP.
4
365
110
60
9
15
18
12
MAX.
-
500
135
85
14
25
27
18
UNIT
S
pF
pF
pF
ns
ns
ns
ns
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = -55 to 175˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
Tsp = 25˚C
current
IDRM
Pulsed reverse drain current Tsp = 25˚C
VSD
Diode forward voltage
IF = 5 A; VGS = 0 V
trr
Reverse recovery time
IF = 5 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
7.5 A
-
-
40
A
- 0.85 1.1 V
-
38
-
ns
-
0.2
-
µC
April 1998
2
Rev 1.100
 ▷