BUK763R8-80E_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK763R8-80E
N-channel TrenchMOS standard level FET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
I_DM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 1
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
see Figure 4
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
I_D = 120 A; V_sup ≤ 80 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped;
see Figure 3
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
Min
-
-
-20
[1] _-
[1] _-
-
Max Unit
80 V
80 V
20 V
120 A
120 A
786 A
-
357 W
-55 175 °C
-55 175 °C
[1] _-
120 A
-
786 A
[2][3] _-
488 mJ
BUK763R8-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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