BUK763R8-80E_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK763R8-80E
N-channel TrenchMOS standard level FET
Rev. 2 — 16 May 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
 AEC Q101 compliant
 Repetitive avalanche rated
 Suitable for thermally demanding
environments due to 175 °C rating
 True standard level gate with VGS(th)
rating of greater than 1V at 175 °C
1.3 Applications
 12V, 24V and 48V Automotive
systems
 Electric and electro-hydraulic power
steering
 Motors, lamps and solenoid control
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
gate-drain charge
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C; see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 11
V_GS = 10 V; I_D = 25 A; V_DS = 64 V;
see Figure 13; see Figure 14
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
80 V
[1] _-
-
120 A
-
-
357 W
-
3.1 3.8 mΩ
-
51 -
nC