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| BUK7107-55ATE_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7107-55ATE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max Unit
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
VGS
gate-source voltage
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 2;
see Figure 3;
-
-20
[1] -
[1] -
55
V
20
V
75
A
140 A
IDM
Ptot
IGS(CL)
peak drain current
total power dissipation
gate-source clamping
current
Visol(FET-TSD) FET to temperature
sense diode isolation
voltage
Tmb = 100 °C; VGS = 10 V;
Tmb = 25 °C; tp ⤠10 µs; pulsed
Tmb = 25 °C; see Figure 1
continuous
pulsed; tp = 5 ms; δ = 0.01
[1] -
75
A
-
560 A
-
272 W
-
10
mA
-
50
mA
-100 100 V
Tstg
storage temperature
Tj
junction temperature
VDGS
drain-gate voltage
Source-drain diode
IDG = 250 µA
-55 175 °C
-55 175 °C
-
55
V
IS
source current
Tmb = 25 °C
-
140 A
-
75
A
ISM
peak source current
Avalanche ruggedness
tp ⤠10 µs; pulsed; Tmb = 25 °C
-
560 A
EDS(AL)S
non-repetitive
ID = 68 A; Vsup ⤠55 V; RGS = 50 â¦; VGS = 10 V;
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
-
460 mJ
Electrostatic Discharge
VESD
electrostatic discharge HBM; C = 100 pF; R = 1.5 kâ¦
voltage
-
6
kV
[1] Current is limited by power dissipation chip rating.
BUK7107-55ATE_2
Product data sheet
Rev. 02 â 19 February 2009
© NXP B.V. 2009. All rights reserved.
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