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BUK7107-55ATE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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BUK7107-55ATE
N-channel TrenchPLUS standard level FET
Rev. 02 â 19 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
 Allows responsive temperature
monitoring due to integrated
temperature sensor
 Electrostatically robust due to
integrated protection diodes
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for standard level gate drive
sources
1.3 Applications
 Automotive and general purpose
power switching
 Electrical Power Assisted Steering
(EPAS)
 Fan control
 Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
-
-
55 V
ID
drain current
VGS = 10 V; Tmb = 25 °C; [1] -
-
140 A
see Figure 2; see Figure 3;
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 1
-
-
272 W
Static characteristics
RDSon drain-source
on-state resistance
Avalanche ruggedness
VGS = 10 V; ID = 50 A;
Tj = 25 °C
-
5.8 7
mâ¦
EDS(AL)S non-repetitive
drain-source
avalanche energy
ID = 68 A; Vsup ⤠55 V;
RGS = 50 â¦; VGS = 10 V;
Tj(init) = 25 °C; unclamped
-
-
460 mJ
[1] Current is limited by power dissipation chip rating
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