BUK583-60A Datasheet, PDF (3/8 Pages) NXP Semiconductors – PowerMOS transistor Logic level FET

Philips Semiconductors
PowerMOS transistor
Logic level FET
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_amb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_amb); conditions: V_GS ≥ 5 V
Zth j-amb / (K/W)
1E+02
D=
0.5
BUKX83
1E+01 ^0.2
0.1
0.05
0.02
1E+00
P
D
t_p
D = ^tp
T
1E-01
0
1E-02
1E-07
1E-05
1E-03 1E-01
t/s
t
T
1E+01 1E+03
Fig.3. Transient thermal impedance.
Z_{th j-amb} = f(t); parameter D = t_p/T
Product specification
BUK583-60A
ID / A
100
10
RDS(ON) ^{= VDS/ID}
1
DC
0.1
BUK583-60A
tp = 10 us
100 us
1 ms
10 ms
100 ms
1s
10 s
0.01
0.1
1
10
100
VDS / V
Fig.4. Safe operating area T_amb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
ID / A
10
9
8
7
5.0
4.5
4.0
3.5
6
VGS / V = 3.0
5
4
3
2
2.5
1
0
0
0.5
1
1.5
2
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
1.2
VGS / V = 2.5
1
0.8
3
0.6
0.4
3.5
0.2
0
0
2
4
6
8
10
ID / A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
September 1995
3
Rev 1.200