BUK556-60H Datasheet, PDF (3/7 Pages) NXP Semiconductors – PowerMOS transistor Logic level FET

Philips Semiconductors
PowerMOS transistor
Logic level FET
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID / IDmax %
120
Normalised Current Derating
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 10 V
1000 ^{ID / A}
100
RDS(ON) ^{= VDS/ ID}
10
DC
BUK556-60H
tp = 10 us
100 us
1 ms
10 ms
100 ms
1
1
10
100
VDS / V
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Product Specification
BUK556-60H
Zth j-mb / (K/W)
10
BUKx56-lv
D=
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0
P_D
tp
D
=
tp
T
0.001
1E-05
1E-03
t/s
T
t
1E-01
1E+01
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
150
ID / A
10
8
BUK5y6-60A
7
6
VGS / V =
100
5
4.5
4
50
3.5
3
2.5
0
0
2
4
6
8
10 12
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
0.1
3 3.5 4
0.08
BUK5y6-60A
4.5 5
6
0.06
0.04
7
0.02
VGS / V = 10
0
0 20 40 60 80 100 120 140
ID / A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
October 1993
3
Rev 1.000