BUK482-200A Datasheet, PDF (3/8 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK482-200A
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_amb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_amb); conditions: V_GS ≥ 10 V
Zth(j-sp) K/W
100
BUK482-200A
10
1
P
tp
D
tp
D=
T
0.1
t
T
0.01
1us 10us 100us 1ms 10ms 100ms 1s 10s
tp / sec
Fig.3. Transient thermal impedance.
Z_{th j-sp} = f(t); parameter D = t_p/T
10 ^{ID / A}
1
BUK482-200A
RDS(ON) ^{= VDS/ID}
0.1
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
0.01
1
10
100
VDS / V
1000
Fig.4. Safe operating area. T_amb = 25 ˚C.
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
10 ^{ID / A}
8
6
BUK482-200A
VGS = 20 V
10
6.5
6
4
5.5
2
5
4.5
4
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
2 ^{RDS(ON) / Ohms BUK482-200A}
1.5
VGS =
5V
1
5.5 V
0.5
6V
6.5 V
10 V
20 V
0
0
Fig.6.
1
2
3
4
5
6
7
8
ID / A
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
January 1998
3
Rev 1.000