BUJ303AD_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
BUJ303AD
NPN power transistor
I_Bon
V_BB
V_CC
L_C
V_CL(CE)
probe point
L_B
DUT
001aab999
12
I_C
(A)
8
003aag028
4
0
0
400
800
1200
V_CEclamp (V)
Fig 1. Test circuit for reverse bias safe operating area Fig 2. Reverse bias safe operating area
120
P_der
(%)
80
001aab993
40
0
0
40
80
120
160
T_mb (°C)
Fig 3. Normalized total power dissipation as a function of mounting base temperature
BUJ303AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2011
© NXP B.V. 2011. All rights reserved.
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