BUJ303AD_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – NPN power transistor

BUJ303AD
NPN power transistor
Rev. 1 — 2 September 2011
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed planar passivated NPN power switching transistor in a SOT428
(DPAK) surface mountable plastic package.
1.2 Features and benefits
 Fast switching
 Low thermal resistance
 Surface mountable package
 Very high voltage capability
 Very low switching and conduction
losses
1.3 Applications
 DC-to-DC converters
 High frequency electronic lighting
ballasts
 Inverters
 Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I_C
Quick reference data
Parameter
collector current
P_tot
V_CESM
total power dissipation
collector-emitter peak
voltage
Static characteristics
h_FE
DC current gain
Conditions
see Figure 1; see Figure 2;
see Figure 4
T_mb ≤ 25 °C; see Figure 3
V_BE = 0 V
I_C = 5 mA; V_CE = 5 V;
T_mb = 25 °C; see Figure 11
I_C = 500 mA; V_CE = 5 V;
T_mb = 25 °C; see Figure 11
Min Typ Max Unit
-
-
5A
-
-
80 W
-
-
1000 V
10 22 30
14 25 35