BU4507DF Datasheet, PDF (3/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4507DF
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IB1
t
IB2
t
Fig.1. Switching times waveforms (16 kHz).
ICsat
90 %
IC
ts
IB
IB1
10 %
tf
t
t
- IB2
Fig.2. Switching times definitions.
IF
I
F
10%
t _fr
time
VF
5V
V _fr
VF
time
Fig.3. Definition of anti-parallel diode V_fr and t_fr.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.4. Switching times test circuit.
hFE
100
VCE = 1V
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
IC / A 10
Fig.5. High and low DC current gain.
hFE
100
VCE = 5V
BU4507DF/X/Z
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
IC / A 10
Fig.6. High and low DC current gain.
January 1999
3
Rev 1.000