BU4507DF Datasheet, PDF (2/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4507DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
22
-
pF
STATIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ²
I_CES
V_CEOsust
Collector-emitter sustaining voltage
BV_EBO
R_be
V_CEsat
V_BEsat
h_FE
h_FE
V_F
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltages
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax
T_j = 125 ˚C
I_B = 0 A; I_C = 100 mA;
L = 25 mH
I_B = 600 mA
V_EB = 6 V
I_C = 4 A; I_B = 1.0 A
I_C = 4 A; I_B = 1.0 A
I_C = 500 mA; V_CE = 5 V
I_C = 4 A; V_CE = 5 V
I_F = 4 A
MIN.
-
-
800
7.5
-
-
0.83
-
4.2
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
-
V
13.5 -
V
30
-
Ω
-
3.0
V
0.92 1.01 V
7
-
5.7 7.3
1.7 2.1
V
DYNAMIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (16 kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
V_fr
Anti-parallel diode forward recovery
voltage
t_fr
Anti-parallel diode forward recovery
time
CONDITIONS
I_Csat = 4 A; I_B1 = 0.8 A;(I_B2 = -2 A)
I_F = 4 A; dI_F/dt = 50 A/µs
V_F = 5 V
TYP. MAX. UNIT
3.7 4.6 µs
300 400 ns
18.5 -
V
500
-
ns
2 Measured with half sine-wave voltage (curve tracer).
January 1999
2
Rev 1.000