BU2727AW Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2727AW
TRANSISTOR
IC
DIODE
ICsat
t
IB
I _B end
t
5 us
6.5 us
16 us
VCE
t
Fig.3. Switching times waveforms (64 kHz).
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB
T.U.T.
Cfb
Fig.5. Switching times test circuit.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.4. Switching times definitions.
hFE
100
VCE = 5 V
10
BU2727A/AF
Tmb = 25 C
Tmb = 85 C
1
0.01
0.1
1
10
100
IC / A
Fig.6. DC current gain. h_FE = f (I_C)
Parameter T_mb
(Low and high gain)
September 1997
3
Rev 1.100