BU2727AW Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2727AW
THERMAL RESISTANCES
SYMBOL
R_{th j-mb}
R_{th j-a}
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T_mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ²
I_CES
I_EBO
BV_EBO
V_CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
V_CEsat
V_BEsat
h_FE
h_FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
V_EB = 7.5 V; I_C = 0 A
I_B = 1 mA
I_B = 0 A; I_C = 100 mA;
L = 25 mH
I_C = 5.0 A; I_B = 0.91 A
I_C = 5.0 A; I_B = 0.91 A
I_C = 0.1 A; V_CE = 5 V
I_C = 5 A; V_CE = 1 V
MIN.
-
-
-
7.5
825
-
0.78
12
5.5
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
1.0 mA
13.5 -
V
-
-
V
-
1.0
V
0.86 0.95 V
22 35
8
11
DYNAMIC CHARACTERISTICS
T_mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (64 kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
CONDITIONS
I_CM = 5.0 A; L_C = 260 µH; C_fb = 4.8 nF;
V_CC = 180 V; I_B(end) = 0.9 A;
L_B = 0.6 µH; -V_BB = 2 V;
(-dI_B/dt = 3.33 A/µs)
TYP.
2.2
tbf
MAX.
tbf
tbf
UNIT
µs
µs
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
100R
1R
6V
30-60 Hz
Fig.1. Test circuit for V_CEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for V_CEOsust.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100