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BU2522DF Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2522DF
TRANSISTOR
IC
DIODE
ICsat
t
IB
I B end
t
5 us
6.5 us
16 us
VCE
t
Fig.1. Switching times waveforms (64 kHz).
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.3. Switching times test circuit.
VCC
IBend
-VBB
LC
LB
Rbe T.U.T.
VCL
CFB
Fig.4. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;
LC = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH;
CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A
hFE
100
Tj = 25 C
5V
Tj = 125 C
10
1V
1
0.1
Fig.5.
1
10
100
IC / A
Typical DC current gain. hFE = f (IC)
parameter VCE
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1.0
0.9
0.8
0.7
IC/IB=
3
0.6
4
0.5
5
0.4
0.1
1
10
IC / A
Fig.6. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.200
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