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| BU2522DF Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2522DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ⤠65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
Rbe
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 7.5 V; IC = 0 A
IB = 600 mA
VEB = 7.5 V
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 6.0 A; IB = 1.2 A
IC = 6.0 A; IB = 1.2 A
IC = 1.0 A; VCE = 5 V
IC = 6 A; VCE = 5 V
IF = 6 A
MIN.
-
-
-
7.5
-
800
-
-
-
5
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
150
-
mA
13.5 -
V
50
-
â¦
-
-
V
-
5.0
V
-
1.1
V
13
-
7
10
-
2.2
V
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (64 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICM = 6.0 A; LC = 170 µH; Cfb = 5.4 nF;
IB(end) = 0.7 A; LB = 0.6 µH; -VBB = 2 V;
(-dIB/dt = 3.33 A / µs)
TYP.
115
1.7
0.12
MAX.
-
2.0
0.25
UNIT
pF
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
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